Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-06 |
MT47H128M16RT-25E |
Micron |
DDR2-800 128Mx16 Pb-Free |
--@ |
Call |
NA |
booking |
2023-11-06 |
MT47H64M8SH-25E:H |
Micron |
DDR2-800 64Mx8 (512Mb) |
--@ |
Call |
NA |
booking |
2023-11-06 |
MT47H128M8SH-25E IT:M |
Micron |
DDR2-800 128Mx8 (1Gb) Ind |
20000 @ |
USD1.70 |
NA |
stock |
2023-11-06 |
K4T1G164QJ-BCE7 |
Samsung |
DDR2-800 64Mx16 Pb-Free |
2560 @ |
USD1.85 |
NA |
1 day |
2023-11-06 |
MT47H128M16RT-25E IT:C |
Micron |
DDR2-800 128Mx16 (2Gb) Ind |
10000 @ |
USD5.50 |
NA |
booking |
2023-11-06 |
MT47H128M16RT-25E:C |
Micron |
DDR2-800 128Mx16 (2Gb) |
--@ |
Call |
NA |
booking |
2023-11-06 |
K4B2G1646F-BYMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) 1.35V |
50400 @ |
USD1.05 |
NA |
4 days |
2023-11-06 |
K4B2G1646F-BMMA |
Samsung |
DDR3-1866 128Mx16 (2Gb) Ind 1.35V |
5600 @ |
USD1.50 |
NA |
1 day |
2023-11-06 |
K4B1G0846I-BYMA |
Samsung |
DDR3-1866 128Mx8 (1Gb) 1.35V |
20480 @ |
USD1.20 |
NA |
5 days |
2023-11-06 |
K4B4G1646E-BCMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) |
11200 @ |
Call |
NA |
3 days |
2023-11-06 |
H5TQ4G63EFR-RDC |
SK hynix |
DDR3-1866 256Mx16 (4Gb) |
11200 @ |
USD1.05 |
NA |
stock |
2023-11-06 |
MT41K256M16TW-107:N |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
booking |
2023-11-06 |
MT41K256M16TW-107 AUT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
booking |
2023-11-06 |
MT41K256M16TW-107 AAT:P |
Micron |
DDR3-1866 256Mx16 (4Gb) 1.35V |
--@ |
Call |
NA |
booking |
2023-11-06 |
K4B4G1646E-BYMA |
Samsung |
DDR3-1866 256Mx16 (4Gb) 1.35V |
20000 @ |
USD1.20 |
NA |
2 days |
|
| Total 18488 Record : 1233 |
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