Date |
Part No |
Manufact |
Description |
QTY |
Price |
D.C |
L.T |
2023-11-06 |
MT41K512M8DA-107 IT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) Ind 1.35V |
10000 @ |
USD1.35 |
NA |
2 days |
2023-11-06 |
MT41K512M8DA-107 AAT:P |
Micron |
DDR3-1866 512Mx8 (4Gb) 1.35V |
--@ |
Call |
NA |
booking |
2023-11-06 |
NT5CC64M16GP-EK |
Nanya |
DDR3-1866 64Mx16 (1Gb) 1.35V |
50000 @ |
Call |
NA |
2 days |
2023-11-06 |
MT41K64M16TW-107:J |
Micron |
DDR3-1866 64Mx16 (1Gb) 1.35V |
20000 @ |
USD1.25 |
NA |
3 days |
2023-11-06 |
K4B4G0846E-BCNB |
Samsung |
DDR3-2133 512Mx8 (4Gb) |
10000 @ |
Call |
NA |
stock |
2023-11-06 |
MT41K128M16JT-125 IT:K |
Micron |
DDR3-1600 128Mx16 (2Gb) Ind 1.35V |
20000 @ |
USD1.26 |
NA |
booking |
2023-11-06 |
MT41K256M8DA-125 IT:K |
Micron |
DDR3-1600 256Mx8 (2Gb) Ind 1.35V |
--@ |
Call |
NA |
booking |
2023-11-06 |
MT41K512M16HA-125:A |
Micron |
DDR3-1600 512Mx16 (8Gb) 1.35V |
10200 @ |
USD15.50 |
NA |
stock |
2023-11-06 |
K4A8G085WC-BCTD |
Samsung |
DDR4-2666 1Gx8 (8Gb) |
10240 @ |
USD1.85 |
NA |
3 days |
2023-11-06 |
K4A4G165WF-BCTD |
Samsung |
DDR4-2666 256Mx16 (4Gb) |
50000 @ |
USD1.30 |
NA |
stock |
2023-11-06 |
MT40A2G4SA-075:E |
Micron |
DDR4-2666 2Gx4 (8Gb) |
5000 @ |
Call |
NA |
stock |
2023-11-06 |
K4A8G165WC-BCTD |
Samsung |
DDR4-2666 512Mx16 (8Gb) |
11200 @ |
USD1.85 |
NA |
stock |
2023-11-06 |
H5AN8G6NCJR-VKC |
SK hynix |
DDR4-2666 512Mx16 (8Gb) |
16000 @ |
USD1.85 |
NA |
stock |
2023-11-06 |
MT40A512M8SA-075:F |
Micron |
DDR4-2666 512Mx8 (4Gb) |
--@ |
Call |
NA |
booking |
2023-11-06 |
K4A4G085WF-BCTD |
Samsung |
DDR4-2666 512Mx8 (4Gb) |
20480 @ |
Call |
NA |
6 days |
|
| Total 18488 Record : 1233 |
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